Characterization of Epitaxial Heavily Doped Silicon Regions Formed by Hot-Wire Chemical Vapor Deposition Using Micro-Raman and Microphotoluminescence Spectroscopy
نویسندگان
چکیده
منابع مشابه
Hot-wire chemical vapor deposition for epitaxial silicon growth on large- grained polycrystalline silicon templates
We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...
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We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230...
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Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon...
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the epitaxial silicon chemical vapor deposition by SiClq/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i .e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions ( i .e . , flow rates and reactor pressure) have been examined. The simulat...
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Experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition. Reactor-scale simulations performed using the Direct Simulation Monte Carlo (DSMC) method have revealed a number of important phenomena such as a sharp drop of 1700 K in the gas temperature from the wire to substrate. The gas-ph...
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ژورنال
عنوان ژورنال: IEEE Journal of Photovoltaics
سال: 2018
ISSN: 2156-3381,2156-3403
DOI: 10.1109/jphotov.2018.2818284